Both, AC/sine wave and bipolar pulse dual magnetron sputtering (see Figure 1, for comparison) are commonly used since they offer similar advantages such as similar duty cycle and mitigation of the “disappearing anode” effect. Industrially, majority of the IGZO films are deposited by sputtering mainly due to its compatibility with existing production-scale fabrication infrastructure. These benefits would be realized if good uniformity of IGZO over large areas is achieved at low deposition/processing temperatures. Interest in IGZO is due to its high electron mobility (> 10 cm 2/Vs) and high optical transmission (> 75%) over the visible range. Indium gallium zinc oxide (InGaZnO or for short IGZO), first proposed in 2003, has become a leading candidate for transparent semiconductor thin film transistors (TFT), and rapidly driving innovations within TFTs due to its high performance and compatibility with diverse flat panel display (FPD) technologies.
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